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RHRD440, RHRD460, RHRD440S, RHRD460S
Data Sheet January 2002
4A, 400V - 600V Hyperfast Diodes
The RHRD440, RHRD460, RHRD440S and RHRD460S are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors. Formerly developmental type TA49055.
Features
* Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns * Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC * Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . . 600V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Ordering Information
PART NUMBER RHRD440 RHRD460 RHRD440S RHRD460S PACKAGE TO-251 TO-251 TO-252 TO-252 BRAND RHR440 RHR460 RHR440 RHR460
Packaging
JEDEC STYLE TO-251
ANODE CATHODE CATHODE (FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RHRD460S9A.
Symbol
K
JEDEC STYLE TO-252
CATHODE (FLANGE) CATHODE ANODE A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RHRD440, RHRD440S RHRD460, RHRD460S 600 600 600 4 8 40 50 10 -65 to 175 300 260 UNITS V V V A A A W mJ oC
oC oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 157oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
(c)2002 Fairchild Semiconductor Corporation
400 400 400 4 8 40 50 10 -65 to 175 300 260
RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B
RHRD440, RHRD460, RHRD440S, RHRD460S
Electrical Specifications
TC = 25oC, Unless Otherwise Specified RHRD440, RHRD440S SYMBOL VF IF = 4A IF = 4A, TC = 150oC IR VR = 400V VR = 600V VR = 400V, TC = 150oC VR = 600V, TC = 150oC trr IF = 1A, dIF/dt = 200A/s IF = 4A, dIF/dt = 200A/s ta tb QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 4A, dIF/dt = 200A/s IF = 4A, dIF/dt = 200A/s IF = 4A, dIF/dt = 200A/s VR = 10V, IF = 0A TEST CONDITION MIN TYP 16 7 45 15 MAX 2.1 1.7 100 500 30 35 3 RHRD460, RHRD460S MIN TYP 16 7 45 15 MAX 2.1 1.7 100 500 30 35 3 UNITS V V A A A A ns ns ns ns nC pF
oC/W
Typical Performance Curves
20 500 IR , REVERSE CURRENT (A) 100 175oC
IF , FORWARD CURRENT (A)
10
175oC
100oC
100oC
25oC 1
0.1 25oC 0.01
0.5 0 0.5 1 1.5 2 2.5 3 VF , FORWARD VOLTAGE (V)
0.001 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
(c)2002 Fairchild Semiconductor Corporation
RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B
RHRD440, RHRD460, RHRD440S, RHRD460S Typical Performance Curves
30 25 t, RECOVERY TIMES (ns) 20 15 10 tb 5 0 0.5 0 0.5 trr t, RECOVERY TIMES (ns)
(Continued)
50 TC = 100oC, dIF/dt = 200A/s 40 trr 30
TC = 25oC, dIF/dt = 200A/s
ta
20
ta tb
10
1 IF , FORWARD CURRENT (A)
4
1 IF , FORWARD CURRENT (A)
4
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
60 50 t, RECOVERY TIMES (ns) 40 30
TC = 175oC, dIF/dt = 200A/s trr
IF(AV) , AVERAGE FORWARD CURRENT (A)
5
4 DC 3 SQ. WAVE 2
ta 20 10 0 0.5 tb
1
1 IF , FORWARD CURRENT (A)
4
0 145
150
155
160
165
170
175
TC , CASE TEMPERATURE (oC)
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
50 CJ , JUNCTION CAPACITANCE (pF)
40
30
20
10
0 0 50 100 150 200 VR , REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
(c)2002 Fairchild Semiconductor Corporation
RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B
RHRD440, RHRD460, RHRD440S, RHRD460S Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
IGBT
-
0.25 IRM IRM
FIGURE 8. trr TEST CIRCUIT
IMAX = 1A L = 20mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV
FIGURE 9. trr WAVEFORMS AND DEFINITIONS
VAVL
IL
IL
t0 t1 t2 t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
(c)2002 Fairchild Semiconductor Corporation
RHRD440, RHRD460, RHRD440S, RHRD460S Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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